maximum ratings and electrical characteristics for capacitive load, derate current by 20%. single phase, half wave, 60hz, resistive or inductive load. rating at 25 o c ambient temperature unless otherwise specified. notes : features low forward voltage drop fast switching for high efficiency high current capability case: molded plastic isolated/insulated ito-220ab high surge current capability weight: 2.03 grams polarity:color band denotes cathode method 208 mounting position: any terminals: solderable per mil-std-202 mechanical data low reverse leakage current (1) reverse recovery test conditions i f = 0.5a, i r = 1.0a, irr = 0.25a. (2) measured at 1.0 mhz and applied reverse voltage of 4.0 volts dc. (3) thermal resistance junction to case. epoxy: ul 94v-0 rate flame retardant ito-220ab unit : inch (mm) .189(4.8) .406(10.3) .130(3.3) .114(2.9) .071(1.8) .055(1.4) .035(0.9) .011(0.3) (2.55) (2.55) .1 .1 .032(.8) .112(2.85) .272(6.9) .606(15.4) .543(13.8) .161(4.1)max .134(3.4) .165(4.2) .381(9.7) .114(2.9) .098(2.5) .055(1.4) .039(1.0) max .100(2.55) .248(6.3) .583(14.8) .512(13.0) .118(3.0) ? urf1605 thru urf1660 pb free plating product urf1605 thru urf1660 16.0 amp.isolated glass passivated junction ultrafast recovery rectifiers ? 2006 thinki semiconductor co.,ltd. http://www.thinkisemi.com/ page 1/2 application automotive environment|dc motor control plating power supply|ups amplifier and sound device system etc.. negative suffix "a" positive suffix "c" doubler/series connection suffix "d" pb -55 to + 150 urf1605c symbol v rrm v rms v dc if (av) i fsm v f i r trr c j t j , t stg 50 100 200 140 200 400 35 70 280 50 100 400 600 420 600 16.0 10.0 175 1.3 1.7 0.98 35 250 90 2.2 unit v v v v a a ua ua o c pf o cw ns 300 210 300 maximum recurrent peak reverse voltage maximum rms voltage maximum dc blocking voltage maximum average forward rectified peak forward surge current, 8.3ms single maximum instantaneous forward voltage maximum dc reverse current @t j =25 o c typical junction capacitance (note 2) operating junction and storage current t c =100 o c half sine-wave superimposed on rated load (jedec method) @ 8.0 a at rated dc blocking voltage @t j =125 o c maximum reverse recovery time (note 1) typical thermal resistance (note 3) r jc temperature range 150 "a" common cathode suffix "c" common anode suffix "d" anode and cathode coexistence suffix urf1605a urf1605d urf1610c urf1610a urf1610d urf1620c urf1620a urf1620d urf1630c urf1630a urf1630d URF1640C urf1640a urf1640d urf1660c urf1660a urf1660d free datasheet http:///
fig.1 - forward current derating curve fig.3 - typical instantaneous forward characteristics average forward rectified current, amperes 16 8 6 4 10 13 iinstantaneous forward current, amperes 0.1 1.0 10 0.01 0.4 0.2 0.6 0.8 1.0 1.2 1.4 1.6 0 0 50 100 150 case temperature, o c instantaneous forward voltage, volts fig.2 - maximum non-repetitive peak forward surge current peak forward surge current, amperes number of cycles at 60hz 0 25 50 75 100 125 150 175 200 110100 fig.4 - typical reverse characteristics percent of rated peak reverse voltage,% instantaneous reverse current, microamperes 0.1 0 1 10 1000 100 20 40 60 80 100 fig.5 - typical junction capacitance reverse voltage, volts 0.1 10 junction capacitance, pf 1000 1.0 4.0 10 100 100 60 hz resistive or inductive load pulse width 8.3ms single half-sire-wave (jedec method) t j =25 o c pulse width=300us 1% duty cycle t j =125 o c t j =25 o c t j = 25 o c f = 1.0 mhz vsig = 50mvp-p urf1630-urf1640 ? 2006 thinki semiconductor co.,ltd. http://www.thinkisemi.com/ page 2/2 urf1605-urf1620 urf1660 ? urf1605 thru urf1660 free datasheet http:///
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